| PART |
Description |
Maker |
| HY5PS561621AFP |
256Mb DDR2 SDRAM
|
Hynix
|
| HY5PS561621BFPC4 HY5PS561621BFPE3 HY5PS561621BFPS5 |
256Mb DDR2 SDRAM
|
Hynix Semiconductor
|
| HYS64T64000GU-3.7-A HYS64T64000GU-5-A HYS64T128020 |
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 4300 4-4-4 2Bank; available 2Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 4300 4-4-4; 2Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 3200 3-3-3 2Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 3200 3-3-3 2Bank; available 2Q/04
|
Infineon
|
| K4T56163QI K4T56163QI-ZCLCC K4T56163QI-ZCLD5 K4T56 |
256Mb I-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| HYS72T512420EFA HYS72T512420EFA-25F-C HYS72T512420 |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products
|
Qimonda AG
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYB18T512160AC-3.7 HYB18T512160AC-5 HYB18T512400AC |
DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 400 (3-3-3) Available 2Q04
DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 400 (3-3-3) Available 2Q04
DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 400 (3-3-3) Available 2Q04
|
Infineon
|
| AT91SAM9G45PRE |
DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR
|
ATMEL Corporation
|
| W3H64M72E-667ES W3H64M72E-667ESI W3H64M72E-400ESI |
64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package 64米72 DDR2 SDRAM08 PBGA封装多芯片封
|
Atmel, Corp.
Fujitsu, Ltd.
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| EDE5104ABSE EDE5104ABSE-5C-E EDE5108ABSE-5C-E EDE5 |
(EDE51xxABSE) 512M bits DDR2 SDRAM
512M bits DDR2 SDRAM 64M X 8 DDR DRAM, 0.5 ns, PBGA64
512M bits DDR2 SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA64
|
Elpida Memory, Inc.
|
